2n3904/mmbt3904/PZT3904 c b e to-92 c b e b c c sot-223 e npn general purpose amplifier this device is designed as a general purpose amplifier and switch. the useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-base voltage 60 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 200 ma t j , t st g operating and storage junction temperature range -55 to +150 c thermal characteristics t a = 25c unless otherwise noted symbol characteristic max units 2n3904 *mmbt3904 **PZT3904 p d total device dissipation derate above 25 c 625 5.0 350 2.8 1,000 8.0 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 125 c/w * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ** device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . 2n3904 mmbt3904 sot-23 mark: 1a PZT3904 w e b s i t e : www.ps-pfs.com c b e to-92 c b e b c c sot-223 e npn general purpose amplifier this device is designed as a general purpose amplifier and switch. the useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-base voltage 60 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 200 ma t j , t st g operating and storage junction temperature range -55 to +150 c 2001 fairchild semiconductor corporation thermal characteristics t a = 25c unless otherwise noted symbol characteristic max units 2n3904 *mmbt3904 **PZT3904 p d total device dissipation derate above 25 c 625 5.0 350 2.8 1,000 8.0 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 125 c/w * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ** device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . 2n3904 mmbt3904 sot-23 mark: 1a PZT3904 2n3904 / mmbt3904 / PZT3904 2n3904/mmbt3904/PZT3904, rev a
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage i c = 1.0 ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 a, i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6.0 v i bl base cutoff current v ce = 30 v, v eb = 3v 50 na i cex collector cutoff current v ce = 30 v, v eb = 3v 50 na off characteristics on characteristics* small signal characteristics switching characteristics * pulse test: pulse width 300 s, duty cycle 2.0% npn (is=6.734f xti=3 eg=1.11 vaf=74.03 bf=416.4 ne=1.259 ise=6.734 ikf=66.78m xtb=1.5 br=.7371 nc=2 isc=0 ikr=0 rc=1 cjc=3.638p mjc=.3085 vjc=.75 fc=.5 cje=4.493p mje=.2593 vje=.75 tr=239.5n tf=301.2p itf=.4 vtf=4 xtf=2 rb=10) spice model f t current gain - bandwidth product i c = 10 ma, v ce = 20 v, f = 100 mhz 300 mhz c obo output capacitance v cb = 5.0 v, i e = 0, f = 1.0 mhz 4.0 pf c ibo input capacitance v eb = 0.5 v, i c = 0, f = 1.0 mhz 8.0 pf nf noise figure i c = 100 a, v ce = 5.0 v, r s =1.0k ? ,f=10 hz to 15.7khz 5.0 db t d delay time v cc = 3.0 v, v be = 0.5 v, 35 ns t r rise time i c = 10 ma, i b1 = 1.0 ma 35 ns t s storage time v cc = 3.0 v, i c = 10ma 200 ns t f fall time i b1 = i b2 = 1.0 ma 50 ns h fe dc current gain i c = 0.1 ma, v ce = 1.0 v i c = 1.0 ma, v ce = 1.0 v i c = 10 ma, v ce = 1.0 v i c = 50 ma, v ce = 1.0 v i c = 100 ma, v ce = 1.0 v 40 70 100 60 30 300 v ce ( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.2 0.3 v v v be ( sat ) base-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.65 0.85 0.95 v v npn general purpose amplifier (continued) 2n3904/mmbt3904/PZT3904 w e b s i t e : www.ps-pfs.com electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage i c = 1.0 ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 a, i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6.0 v i bl base cutoff current v ce = 30 v, v eb = 3v 50 na i cex collector cutoff current v ce = 30 v, v eb = 3v 50 na off characteristics on characteristics* small signal characteristics switching characteristics * pulse test: pulse width 300 s, duty cycle 2.0% npn (is=6.734f xti=3 eg=1.11 vaf=74.03 bf=416.4 ne=1.259 ise=6.734 ikf=66.78m xtb=1.5 br=.7371 nc=2 isc=0 ikr=0 rc=1 cjc=3.638p mjc=.3085 vjc=.75 fc=.5 cje=4.493p mje=.2593 vje=.75 tr=239.5n tf=301.2p itf=.4 vtf=4 xtf=2 rb=10) spice model f t current gain - bandwidth product i c = 10 ma, v ce = 20 v, f = 100 mhz 300 mhz c obo output capacitance v cb = 5.0 v, i e = 0, f = 1.0 mhz 4.0 pf c ibo input capacitance v eb = 0.5 v, i c = 0, f = 1.0 mhz 8.0 pf nf noise figure i c = 100 a, v ce = 5.0 v, r s =1.0k ,f=10 hz to 15.7khz 5.0 db t d delay time v cc = 3.0 v, v be = 0.5 v, 35 ns t r rise time i c = 10 ma, i b1 = 1.0 ma 35 ns t s storage time v cc = 3.0 v, i c = 10ma 200 ns t f fall time i b1 = i b2 = 1.0 ma 50 ns h fe dc current gain i c = 0.1 ma, v ce = 1.0 v i c = 1.0 ma, v ce = 1.0 v i c = 10 ma, v ce = 1.0 v i c = 50 ma, v ce = 1.0 v i c = 100 ma, v ce = 1.0 v 40 70 100 60 30 300 v ce ( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.2 0.3 v v v be ( sat ) base-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.65 0.85 0.95 v v 2n3904 / mmbt3904 / PZT3904 npn general purpose amplifier (continued)
typical characteristics base-emitter on voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) be(on) c v = 5v ce 25 c 125 c - 40 c npn general purpose amplifier (continued) base-emitter saturation voltage vs collector current 0.1 1 10 100 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter voltage (v) besat c = 10 25 c 125 c - 40 c collector-emitter saturation voltage vs collector current 0.1 1 10 100 0.05 0.1 0.15 i - collector current (ma) v - collector-emitter voltage (v) cesat 25 c c = 10 125 c - 40 c collector-cutoff current vs ambient temperature 25 50 75 100 125 150 0.1 1 10 100 500 t - ambient temperature ( c) i - collector current (na) a v = 30v cb cbo capacitance vs reverse bias voltage 0.1 1 10 100 1 2 3 4 5 10 reverse bias voltage (v) capacitance (pf) c obo c ibo f = 1.0 mhz typical pulsed current gain vs collector current 0. 1 1 10 1 00 0 100 200 300 400 500 i - collector current (ma) h - typ ical pulsed current gain fe - 40 c 25 c c v = 5v ce 125 c 2n3904/mmbt3904/PZT3904 w e b s i t e : www.ps-pfs.com 2n3904 / mmbt3904 / PZT3904 typical characteristics base-emitter on voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) be(on) c v = 5v ce 25 c 125 c - 40 c npn general purpose amplifier (continued) base-emitter saturation voltage vs collector current 0.1 1 10 100 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter voltage (v) besat c = 10 25 c 125 c - 40 c collector-emitter saturation voltage vs collector current 0.1 1 10 100 0.05 0.1 0.15 i - collector current (ma) v - collector-emitter voltage (v) cesat 25 c c = 10 125 c - 40 c collector-cutoff current vs ambient temperature 25 50 75 100 125 150 0.1 1 10 100 500 t - ambient temperature ( c) i - collector current (na) a v = 30v cb cbo capacitance vs reverse bias voltage 0.1 1 10 100 1 2 3 4 5 10 reverse bias voltage (v) capacitance (pf) c obo c ibo f = 1.0 mhz typical pulsed current gain vs collector current 0. 1 1 10 1 00 0 100 200 300 400 500 i - collector current (ma) h - typ ical pulsed current gain fe - 40 c 25 c c v = 5v ce 125 c
power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 sot-23 to-92 typical characteristics (continued) noise figure vs frequency 0.1 1 10 100 0 2 4 6 8 10 12 f - frequency (khz) nf - noise figure (db) v = 5.0v ce i = 100 a, r = 500 ? c s i = 1.0 ma r = 200 ? c s i = 50 a r = 1.0 k ? c s i = 0.5 ma r = 200 ? c s k ? noise figure vs source resistance 0.1 1 10 100 0 2 4 6 8 10 12 r - source resistance ( ) nf - noise figure (db) i = 100 a c i = 1.0 ma c s i = 50 a c i = 5.0 ma c - degrees 0 40 60 80 100 120 140 160 20 180 current gain and phase angle vs frequency 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 f - frequency (mhz) h - current gain (db) v = 40v ce i = 10 ma c h fe fe turn-on time vs collector current 110100 5 10 100 500 i - collector current (ma) time (ns) i = i = b1 c b2 i c 10 40v 15v 2.0v t @ v = 0v cb d t @ v = 3.0v cc r rise time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - rise time (ns) i = i = b1 c b2 i c 10 t = 125 c t = 25 c j v = 40v cc r j npn general purpose amplifier (continued) 2n3904/mmbt3904/PZT3904 w e b s i t e : www.ps-pfs.com power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 sot-23 to-92 typical characteristics (continued) noise figure vs frequency 0.1 1 10 100 0 2 4 6 8 10 12 f - frequency (khz) nf - noise figure (db) v = 5.0v ce i = 100 a, r = 500 c s i = 1.0 ma r = 200 c s i = 50 a r = 1.0 k c s i = 0.5 ma r = 200 c s k noise figure vs source resistance 0.1 1 10 100 0 2 4 6 8 10 12 r - source resistance ( ) nf - noise figure (db) i = 100 a c i = 1.0 ma c s i = 50 a c i = 5.0 ma c - degrees 0 40 60 80 100 120 140 160 20 180 current gain and phase angle vs frequency 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 f - frequency (mhz) h - current gain (db) v = 40v ce i = 10 ma c h fe fe turn-on time vs collector current 110100 5 10 100 500 i - collector current (ma) time (ns) i = i = b1 c b2 i c 10 40v 15v 2.0v t @ v = 0v cb d t @ v = 3.0v cc r rise time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - rise time (ns) i = i = b1 c b2 i c 10 t = 125 c t = 25 c j v = 40v cc r j 2n3904 / mmbt3904 / PZT3904 npn general purpose amplifier (continued)
npn general purpose amplifier (continued) typical characteristics (continued) storage time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - storage time (ns) i = i = b1 c b2 i c 10 s t = 125 c t = 25 c j j fall time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - fall time (ns) i = i = b1 c b2 i c 10 v = 40v cc f t = 125 c t = 25 c j j current gain 0.1 1 10 10 100 500 i - collector current (ma) h - current gain v = 10 v ce c fe f = 1.0 khz t = 25 c a o output admittance 0.1 1 10 1 10 100 i - collector current (ma) h - output admittance ( mhos) v = 10 v ce c oe f = 1.0 khz t = 25 c a o input impedance 0.1 1 10 0.1 1 10 100 i - collector current (ma) h - input impedance (k ) v = 10 v ce c ie f = 1.0 khz t = 25 c a o ? voltage feedback ratio 0.1 1 10 1 2 3 4 5 7 10 i - collector current (ma) h - voltage feedback ratio (x10 ) v = 10 v ce c re f = 1.0 khz t = 25 c a o _ 4 2n3904/mmbt3904/PZT3904 w e b s i t e : www.ps-pfs.com 2n3904 / mmbt3904 / PZT3904 npn general purpose amplifier (continued) typical characteristics (continued) storage time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - storage time (ns) i = i = b1 c b2 i c 10 s t = 125 c t = 25 c j j fall time vs collector current 1 10 100 5 10 100 500 i - collector current (ma) t - fall time (ns) i = i = b1 c b2 i c 10 v = 40v cc f t = 125 c t = 25 c j j current gain 0.1 1 10 10 100 500 i - collector current (ma) h - current gain v = 10 v ce c fe f = 1.0 khz t = 25 c a o output admittance 0.1 1 10 1 10 100 i - collector current (ma) h - output admittance ( mhos) v = 10 v ce c oe f = 1.0 khz t = 25 c a o input impedance 0.1 1 10 0.1 1 10 100 i - collector current (ma) h - input impedance (k ) v = 10 v ce c ie f = 1.0 khz t = 25 c a o voltage feedback ratio 0.1 1 10 1 2 3 4 5 7 10 i - collector current (ma) h - voltage feedback ratio (x10 ) v = 10 v ce c re f = 1.0 khz t = 25 c a o _ 4
test circuits 10 k ? ? ? ? ? 3.0 v 275 ? ? ? ? ? t 1 c 1 < < < < < 4.0 pf duty cycle = = = = = 2% duty cycle = = = = = 2% < < < < < 1.0 ns - 0.5 v 300 ns 10.6 v 10 < < < < < t 1 < < < < < 500 s 10.9 v - 9.1 v < < < < < 1.0 ns 0 0 10 k ? ? ? ? ? 3.0 v 275 ? ? ? ? ? c 1 < < < < < 4.0 pf 1n916 figure 2: storage and fall time equivalent test circuit figure 1: delay and rise time equivalent test circuit npn general purpose amplifier (continued) 2n3904/mmbt3904/PZT3904 w e b s i t e : www.ps-pfs.com test circuits 10 k 3.0 v 275 t 1 c 1 4.0 pf duty cycle
2% duty cycle
2% 1.0 ns - 0.5 v 300 ns 10.6 v 10 t 1 500 s 10.9 v - 9.1 v 1.0 ns 0 0 10 k 3.0 v 275 c 1 4.0 pf 1n916 figure 2: storage and fall time equivalent test circuit figure 1: delay and rise time equivalent test circuit 2n3904 / mmbt3904 / PZT3904 npn general purpose amplifier (continued)
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